| 具有在片稳定网络的GaAs HBT微波功率管 |
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| 引用本文： | 陈延湖,申华军,王显泰,葛霁,李滨,刘新宇,吴德馨. 具有在片稳定网络的GaAs HBT微波功率管[J]. 半导体学报, 2006, 27(12): 2075-2079 |
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| 作者姓名： | 陈延湖 申华军 王显泰 葛霁 李滨 刘新宇 吴德馨 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21.6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器.
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| 关 键 词： | HBT 微波功率管 稳定性 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-08-16 |
GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network |
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| Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, Liu Xinyu, Wu Dexin. GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network[J]. Journal of Semiconductors, 2006, In Press. Chen Y H, Shen H J, Wang X T, Ge J, Li B, Liu X Y, Wu D X. GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network[J]. Chin. J. Semicond., 2006, 27(12): 2075.Export: BibTex EndNote |
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| Authors: | Chen Yanhu Shen Huajun Wang Xiantai Ge Ji Li Bin Liu Xinyu Wu Dexin |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | An InGaP/GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process.From the stability factor K,the device shows unconditional stability in a wide frequency range due to the RC network.The power characteristics of the device as measured by a load-pull system show that the large-signal performance of the power transistor is affected slightly by the RC network.Psat is 30dBm at 5.4GHz,and P1dB is larger than 21.6dBm at 11GHz.The stability of the device due to RC network is proved by a power combination circuit.This makes the power transistor very suitable for applications in microwave high power HBT amplifiers. |
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| Keywords: | HBT microwave power transistor stability |
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