| 衬底结构特征对硅基螺旋电感性能的影响 |
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| 引用本文： | 薛春来,姚飞,成步文,王启明. 衬底结构特征对硅基螺旋电感性能的影响[J]. 半导体学报, 2006, 27(11): 1955-1960 |
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| 作者姓名： | 薛春来 姚飞 成步文 王启明 |
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| 作者单位： | 中国科学院半导体研究所,集成光电子国家重点联合实验室,北京,100083 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，国家重点基础研究发展计划(973计划)，国家自然科学基金 |
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| 摘 要： | 使用三维电磁场模拟的方法对不同硅衬底结构螺旋电感进行了模拟和分析.通过改变衬底的电导率、隔离层的厚度以及隔离层的材料、衬底引入硅锗合金层等模拟,分析了电感性能的变化.结果表明随着电导率的减小,电感的性能会增强,但改善的幅度会逐渐减小.厚的SiO2隔离层有利于减小衬底损耗,但是会给工艺增加难度.采用低k材料作为隔离层是改善电感性能的一种比较理想的方法.
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| 关 键 词： | 硅基 螺旋电感 品质因子 衬底结构 |
| 收稿时间： | 2015-08-18 |
Effect of Substrate Structure on the Performance of a Silicon On-Chip Spiral Inductor |
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| Xue Chunlai, Yao Fei, Cheng Buwen, Wang Qiming. Effect of Substrate Structure on the Performance of a Silicon On-Chip Spiral Inductor[J]. Journal of Semiconductors, 2006, In Press. Xue C L, Yao F, Cheng B W, Wang Q M. Effect of Substrate Structure on the Performance of a Silicon On-Chip Spiral Inductor[J]. Chin. J. Semicond., 2006, 27(11): 1955.Export: BibTex EndNote |
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| Authors: | Xue Chunlai Yao Fei Cheng Buwen Wang Qiming |
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| Affiliation: | State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | The effect of substrate structure on the performance of a spiral inductor is investigated with the 3D electromagnetic simulator HFSS.With variations in the substrate structure including substrate conductivity,permittivity,and thickness of the dielectric layer, the performance of the inductors is analyzed in detail.The simulation results indicate that the performance of the spiral inductor can be improved by lowering the conductivity of the substrate,increasing the thickness of the dielectric layer,and using a low k dielectric layer.In the mean time,some "design rules" are summarized form the results of this study. |
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| Keywords: | silicon spiral inductor quality factor substrate structure |
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