The guard-ring termination for the high-voltage SiC Schottkybarrier diodes |
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Authors: | Ueno K. Urushidani T. Hashimoto K. Seki Y. |
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Affiliation: | Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto ; |
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Abstract: | In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-ring indicates the effectiveness of the guard-ring to relax the electric field, from the results that the breakdown voltage is about two times larger with high yield |
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