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Synthesis of TiB2 by High-Dose Implantation of Boron Ions in Titanium Films
Authors:Shoichi  Okamoto   Akira  Kawai   Kenkichiro  Kobayashi   Masasuke  Takata   Tsutomu  Yamashita Shiro  Yamashita
Affiliation:Technological University of Nagaoka, Faculty of Engineering, Nagaoka, Niigata, 949–54 Japan;Daini Seikosha Co. Ltd., Koto-ku, Tokyo, 136 Japan
Abstract:Boron ions were implanted at room temperature in Ti films at a high dose (7.1 × 10I7 and 2.3 × 1018 ions/cm2), The formation of TiB2 films was confirmed by X-ray diffraction. Boron concentration profiles in implanted films were studied by secondary-ion mass spectrometry.
Keywords:
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