Preparation and Properties of Woodceramic Thin Films

Woodceramic thin films were prepared onto alumina sheet and glass slide substrates by conventional radio frequency sputtering in an argon plasma. A woodceramic disk, 100 mm in diameter, sintered at 850°C was used as a target. The deposition rate was about 90 nm/h for 200 W input power. Remarkable differences were observed in the characteristics of films depending on the substrate temperature. Films prepared below 100°C had insulating properties, > 106 cm, and had transmission in the visible region ( > 600 nm), and had smooth surfaces. Increasing the substrate temperature causes sharp a decrease in the film resistivity and the growth of grain was 3–5 m. The film prepared at 300°C had semiconductor characteristics with an energy gap of about 0.05 eV.