Amorphous semiconducting film containing nanometer particles of CuTCNQ: preparation, characterization and electrical switching property

An amorphous functional organometallic semiconducting thin film containing nanometer particles of a CuTCNQ charge-transfer complex was prepared and characterized by UV-VIS-NIR spectral analysis, Fourier transform infrared (FTIR) spectral analysis, Fourier transform Raman spectral analysis and I–V characterization. All of the spectral analyses are identical to those of both chemically synthesized pure CuTCNQ powder produced by the reaction of CuI and TCNQ, and the solution-grown polycrystalline films. I–V characteristics showed a memory switching property in the amorphous film material sandwiched between two metal electrodes of Al and Cu at a electric field strength of about 7 000 V cm^?1.