首页 | 本学科首页   官方微博 | 高级检索  
     

MgO对ZnO压敏电阻电性能的影响
引用本文:许毓春,李慧峰.MgO对ZnO压敏电阻电性能的影响[J].压电与声光,1996,18(2):114-116.
作者姓名:许毓春  李慧峰
作者单位:华中理工大学固体电子学系
摘    要:研究了MgO掺杂对ZnO压敏电阻电性能的影响。结果表明,MgO含量增加,压敏场强E1ma=V1mA/d上升,通流能力增强,非线性指数α和漏电流IL变化不大。文中还对上述结果进行了理论分析。

关 键 词:ZnO压敏电阻,MgO掺杂,电性能

Effect of MgO Dopant on Electrical Characteristics of ZnO Varistor
Xu Yuchun, Li Huifeng, Wang Liqiong, Wang Shiliang.Effect of MgO Dopant on Electrical Characteristics of ZnO Varistor[J].Piezoelectrics & Acoustooptics,1996,18(2):114-116.
Authors:Xu Yuchun  Li Huifeng  Wang Liqiong  Wang Shiliang
Abstract:The effect of MgO dopant on electrical characteristics of ZnO varistor has been investigated in this paper. The results show that the electrical field and surge withstanding capabilityof the varistor increase with the MgO content,while the nonlinear exponent and leakage currentare almost not changed. Simutaneously,a theoretical analysis on the results is made.
Keywords:s: ZnO varistor  MgO dopant  electrical chracteristics  
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号