AlGaInP microcavity light-emitting diodes at 650 nm on Gesubstrates |
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| Authors: | Modak P D'Hondt M Delbeke D Moerman I Van Daele P Baets R Demeester P Mijlemans P |
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| Affiliation: | Dept. of Inf. Technol., Ghent Univ.; |
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| Abstract: | We demonstrate microcavity light emitting diodes (MCLEDs) emitting at 650 nm on Ge substrates. Ge has the advantage of lower cost and higher strength compared to GaAs substrates. The multi-quantum well microcavity devices consisted of AlGaAs-based distributed Bragg reflector (DBR) mirrors, AlGaInP active material with an additional 5-μm p-Al0.55Ga0.45As current spreading layer on top of the p-DBR. A maximum external quantum efficiency of 4.35% and an optical power higher than 5 mW was obtained for a device with 200-μm diameter. The results indicate the potential use of MCLEDs on Ge for visible LEDs |
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