| 钯栅厚度对气敏MOS晶体管灵敏度的影响 |
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| 引用本文： | 张维新,赵一兵,侯曾一. 钯栅厚度对气敏MOS晶体管灵敏度的影响[J]. 传感技术学报, 1989, 0(1) |
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| 作者姓名： | 张维新 赵一兵 侯曾一 |
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| 作者单位： | 天津大学(张维新，赵一兵)，天津大学(侯曾一) |
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| 摘 要： | 本文介绍了一种Pd栅MOS结构的半导体气敏器件。在叙述Pd栅MOS晶体管气敏机理的基础上,着重讨论了钯栅厚度对器件灵敏度的影响。实验结果证明,Pd栅MOS晶体管的灵敏度随着钯栅厚度的增加而降低。在工作温度不太高的条件下,灵敏度随钯栅厚度的变化基本上不受温度的影响。另外,文中还扼要地阐述了钯栅M0S晶体管的结构、制造技术及器件灵敏度的测试原理和方法。研究结果对于MOS结构的半导体气敏传感器的研制具有重要的意义。
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| 关 键 词： | MOS气敏晶体管 钯栅 灵敏度 |
Effect Pd-gate Thickness on Sensitivity of MOS Transistor |
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| Zhang Weixin Zhao Yibing and Hou Zengyi. Effect Pd-gate Thickness on Sensitivity of MOS Transistor[J]. Journal of Transduction Technology, 1989, 0(1) |
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| Authors: | Zhang Weixin Zhao Yibing and Hou Zengyi |
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| Abstract: | In this paper a Pd-gate MOS transistor of gas sensing has been reported based on the gas sensitive mechanism of MOS transistor. The experimental results have shown that the sensitivity of Pd-gale MOS transistor decreases with the increase of the Pd-gate thickness. The change of the sensitivity is not influenced by the operation temperature as it is nol very high.The structure and fabrication of the MOS transistor have been reported.The measured priciple and method of the device sensitivity have explained. The investigated results are very important for the research and fabrication of the MOS structure gas sensors. |
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| Keywords: | MOS-gas-trausistor Pd-gate sensitivity |
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