Effect of γ irradiation on the photoluminescence kinetics of porous silicon |
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| Authors: | V. F. Agekyan Yu. A. Stepanov V. V. Emtsev A. A. Lebedev D. S. Poloskin A. D. Remenyuk |
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| Affiliation: | (1) Institute of Physics, St. Petersburg State University, 199034 St. Petersburg, Russia;(2) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | The effect of γ irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity and decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electrons and holes via tunneling. The γ irradiation of porous silicon leads to a greater dispersion of the decay time. Fiz. Tekh. Poluprovodn. 33, 1462–1464 (December 1999) |
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