Highly transparent and conducting zinc oxide films deposited by activated reactive evaporation |
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Authors: | W S Lau S J Fonash |
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Affiliation: | (1) Center for Electronic Materials and Devices Engineering Science Program, The Pennsylvania State University, 16802 University Park, PA |
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Abstract: | Highly transparent and conducting undoped zinc oxide films have been obtained with a best resistivity of ~1.1 × 10-3 Ω cm, a carrier density of ~1.5 × 1020 cm?3 and a mobility of ~38 cm2V?1s ?1. These were produced by activated reactive evaporation at a deposition rate of 2 to 8Å/s with a substrate temperature ≤200° C. The films deposited by this process were found to have resistivities that were thickness independent and also were relatively insensitive to deposition parameters. In terms of conductivity, it was found that films deposited at higher temperatures (T > 300°+ C) were always inferior to the films deposited below 200° C. High temperature vacuum annealing (350° C) significantly degraded the resistivity of the undoped films deposited at low temperature; this was attributable to a drop in both the electron concentration and the mobility. Aluminum doping was found to be able to stabilize the electron concentration while the drop in mobility was found to be related to the choice of substrate. |
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Keywords: | Zinc oxide films highly transparent films conducting films high temperature stability |
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