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Shape memory effect in Cu nanowires
Authors:Liang Wuwei  Zhou Min  Ke Fujiu
Affiliation:School of Materials Science and Engineering, The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405, USA.
Abstract:A rubber-like pseudoelastic behavior is discovered in single-crystalline face-centered-cubic (FCC) Cu nanowires in atomistic simulations. Nonexistent in bulk Cu, this phenomenon is associated primarily with a reversible crystallographic lattice reorientation driven by the high surface-stress-induced internal stresses due to high surface-to-volume ratios at the nanoscale level. The temperature-dependence of this behavior leads to a shape memory effect (SME). Under tensile loading and unloading, the nanowires exhibit recoverable strains up to over 50%, well beyond the typical recoverable strains of 5-8% for most bulk shape memory alloys (SMAs). This behavior is well-defined for wires between 1.76 and 3.39 nm in size over the temperature range of 100-900 K.
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