Normally-off characteristics of LiNbO3/AlGaN/GaN ferroelectric field-effect transistor |
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| Authors: | LZ Hao J Zhu YJ LiuXW Liao SL WangJJ Zhou C KongHZ Zeng Y ZhangWL Zhang YR Li |
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| Affiliation: | a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Chinab Faculty of Science, China University of Petroleum, Qingdao 266555, Chinac National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China |
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| Abstract: | With the help of MgO mask layer, LiNbO3 (LN) ferroelectric films were etched effectively using wet etching method and LN/AlGaN/GaN ferroelectric field-effect transistors (FFETs) were fabricated. The electrical properties of the FFETs were studied. Due to the ferroelectric polarization nature of LN films, normally-off characteristics with a turn-on voltage of about + 1.0 V were exhibited in the device. The operation mechanisms of the LN/AlGaN/GaN FFET devices were proposed by the numerical calculations of the electronic band structure and charge distribution. |
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| Keywords: | Ferroelectric films Lithium niobate Gallium nitride Normally-off Transistors |
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