Effect of B-site ion substitution on chemical bond characteristics and microwave dielectric properties of ZnWO4 ceramics |
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| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China;2. Yangtze River Delta Research Institute of UESTC (Huzhou), Huzhou, 313000, China;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China;3. School of Materials Science and Engineering, Hainan University, Haikou 570228, China;4. Ganzhou DPT Technology Co., Ltd., Ganzhou 341000, China;1. National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, 610054, China;2. Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China;1. Yantai University, Yantai 264005, Shandong, China;2. School of Materials Science and Engineering, University of Jinan, Jinan 250022, Shandong, China;3. School of Petroleum Engineering, China University of Petroleum, Qingdao 266580, Shandong, China;4. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China |
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| Abstract: | Herein, the influence of Mo6+ substitution on the crystal structure, microstructures, chemical bond characteristics, vibration characteristics and microwave dielectric properties of ZnMoxW1-xO4(x = 0−0.12) ceramics prepared by a solid-state reaction were investigated. The results show that Mo6+ substitution does not produce secondary phase, the densification temperature decreases from 1100 to 925 ℃, and Q × f values increased from 19605 GHz (x = 0) to 61640 GHz (x = 0.06) at 925 ℃, which resulted from the packing fraction, UtW-O and microstructures. Also, the τf values were optimized to −34 ppm/°C due to changes in the degree of structural order and stability of chemical bonds.AfiW-O, molecular polarizability and porosity first led to an increase in permittivity and decrease thereafter. The ZnMo0.06W0.94O4 ceramics sintered at 925℃ exhibited satisfactory properties (εr = 15.10, Q × f = 61,640 GHz, and τf = -34 ppm/°C), providing a potential candidate for microwave devices. |
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| Keywords: | Chemical bond characteristics Microwave dielectric properties Microwave devices |
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