Characterization of microwave and terahertz dielectric properties of single crystal La2Ti2O7 along one single direction |
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| Affiliation: | 1. State Key Laboratory of Materials Processing and Die and Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, Hubei Province, China;2. Faculty of Science and Engineering, University of Chester, Thornton Science Park, Chester, CH2 4NU, United Kingdom;3. School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS, United Kingdom;4. Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Xueyuan Road, Shenzhen 518055, Guangdong Province, China;1. School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, UK;2. State Key Laboratory of Solidification Processing, MIIT Key Laboratory of Radiation Detection Materials and Devices, USI Institute of Intelligence Materials and Structure, NPU-QMUL Joint Research Institute of Advanced Materials and Structure, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi''an, China;3. Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovak Republic;4. Institute of Materials Research, Slovak Academy of Sciences, Watsonova 47, 04353, Ko?ice, Slovak Republic;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China;2. Yangtze River Delta Research Institute of UESTC (Huzhou), Huzhou, 313000, China;1. School of Science, Xi’an University of Posts and Telecommunications, Xi’an, 710121, China;2. College of Physics and Information Technology, Shaanxi Normal University, Xi’an, 710062, China;3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China;4. Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China;1. Department of Materials Science and Engineering, Xiamen University, Xiamen, 361005, China;2. Department of Physics, Beijing Key Lab of Metamaterials and Devices and Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing Advanced Innovation Center for Imaging Technology, Capital Normal University, Beijing 100048, People''s Republic of China;3. Department of Electronic and Electrical Engineering, University of Chester, Chester, CH2 4NU, United Kingdom;4. School of Engineering and Material Sciences, Queen Mary, University of London, London, E1 4NS, United Kingdom;5. China Electronic Product Reliability and Environmental Testing Research Institute, No.110 Dongguanzhuang Road, Guangzhou, 510610, China |
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| Abstract: | New generation wireless communication systems require characterisations of dielectric permittivity and loss tangent at microwave and terahertz bands. La2Ti2O7 is a candidate material for microwave application. However, all the reported microwave dielectric data are average value from different directions of a single crystal, which could not reflect its anisotropic nature due to the layered crystal structure. Its dielectric properties at the microwave and terahertz bands in a single crystallographic direction have rarely been reported. In this work, a single crystal ferroelectric La2Ti2O7 was prepared by floating zone method and its dielectric properties were characterized from 1 kHz to 1 THz along one single direction. The decrease in dielectric permittivity with increasing frequency is related to dielectric relaxation from radio frequency to microwave then to terahertz band. The capability of characterizing anisotropic dielectric properties of a single crystal in this work opens the feasibility for its microwave and terahertz applications. |
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| Keywords: | Dielectric property Microwave wave Terahertz band |
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