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Study of ionic adsorption on EOS structures by combining electroreflectance, photocurrent and capacitance measurements |
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| Authors: | N Jaffrezic-Renault H Perrot C Nguyen van Huong |
| Affiliation: | a Laboratoire de Physicochimie des Interfaces, Ecole Centrale de Lyon-BP 163-69131 Ecully, France b Laboratoire d'Electrochimie Interfaciale-CNRS 1, Place Aristide Briand-92195 Meudon, France |
| Abstract: | The Si/modified SiO2/electrolyte structure is a very simple tool for studying ionic adsorption at the modified SiO2/electrolyte interface, where ionic response of ISFET sensors (Ion Sensitive Field Effect Transistor) originates. This paper presents a study of H+ adsorption on Si/SiO2 and Si/alkyl grafted SiO2/electrolyte structures by one electrical method—capacitance measurements—and two electro-optical methods—electroreflectance and photocurrent measurements. The pH responses obtained by the three techniques are similar: about 27 mV per pH unit for bare SiO2 and about 12 mV per pH unit for C17 grafted SiO2. The electro-optical methods afford the advantage of allowing localized measurements, thus obtaining the topography of the surface. |
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