The GaAs P-N-P-N laser diode |
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Authors: | Lockwood H. Etzold K.-F. Stockton T. Marinelli D. |
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Affiliation: | RCA Laboratories, Princeton, N.J, Usa; |
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Abstract: | The general structure of double-heterojunction diode lasers is shown to be consistent with the required geometry of the Shockley diode or p-n-p-n switch. When the two devices are combined in a single structure, there results an extremely simple source of high optical power (>0.5-W) pulses of very short duration (<10 ns) without the need for a complex external driver. In principle, pulse triggering and repetition rate are easily controlled, suggesting that the device has potential application in pulse-coded optical communication systems. |
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