| 一种高性能InP基谐振隧穿二极管的研制 |
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| 引用本文： | 齐海涛,冯震,李亚丽,张雄文,商耀辉,郭维廉.一种高性能InP基谐振隧穿二极管的研制[J].半导体学报,2007,28(12):1945-1948. |
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| 作者姓名： | 齐海涛 冯震 李亚丽 张雄文 商耀辉 郭维廉 |
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| 作者单位： | [1]天津大学电子信息工程学院,天津300072 [2]中国电子科技集团公司第十三研究所,石家庄050051 |
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| 基金项目： | 国防重点实验室基金
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中国博士后科学基金 |
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| 摘 要： | 设计并用分子束外延技术生长了InP基InGaAs/AlAs体系RTD材料,采用传统湿法腐蚀、光学接触式光刻、金属剥离、台面隔离和空气桥互连工艺,研制出了具有优良负阻特性和较高阻性截止频率的InP基RTD单管，器件正向PVCR为17.5,反向PVCR为28,峰值电流密度为56kA/cm^2,采用RNC电路模型进行数据拟合后得到阻性截止频率为82.8GHz，实验为今后更高性能RTD单管的研制,以及RTD与其他高速高频三端器件单片集成电路的设计与研制奠定了基础。
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| 关 键 词： | 谐振隧穿二极管 InP 负阻 阻性截止频率 |
| 文章编号： | 0253-4177(2007)12-1945-04 |
| 修稿时间： | 7/6/2007 4:42:11 PM |
Fabrication of a High-Performance RTD on InP Substrate |
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| Qi Haitao,Feng Zhen,Li Yali,Zhang Xiongwen,Shang Yaohui,Guo Weilian.Fabrication of a High-Performance RTD on InP Substrate[J].Chinese Journal of Semiconductors,2007,28(12):1945-1948. |
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| Authors: | Qi Haitao Feng Zhen Li Yali Zhang Xiongwen Shang Yaohui Guo Weilian |
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| Affiliation: | School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China; The 13th Research Institute,CETC,Shijiazhuang 050051,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China; The 13th Research Institute,CETC,Shijiazhuang 050051,China |
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| Abstract: | InGaAs/AlAs RTD material structure on InP substrate is designed and grown by molecular beam epitaxy.A device with good negative differential resistance characteristics and a higher resistive cutoff frequency is fabricated using mesa isolation,metal lift-off,wet chemical etch,and air bridge technologies.The forward bias peak-to-valley current ratio (PVCR) and reverse bias PVCR are about 17.5 and 28,respectively.The peak current density is 56kA/cm2,and the data fitting resistive cutoff frequency using an RNC circuit model is 82.8GHz.The experiment lays a foundation for the design and fabrication of high-performance RTD and monolithic integration circuits of RTD and other high speed and high frequency three terminal devices. |
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| Keywords: | resonant tunneling diode InP negative differential resistance resistive cutoff frequency |
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