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Optimization of III–V compound semiconductor heterostructures for distributed Bragg reflector applications in VCSELs |
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| Authors: | M. Linnik and A. Christou |
| Affiliation: | Department of Materials and Nuclear Engineering, Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742, USA |
| Abstract: | A selectively oxidized vertical cavity surface emitting laser (VCSEL) has been designed and fabricated for operation at a wavelength of 1.546 μm. The device structure was grown on an InP substrate using III–V quaternary semiconductor alloys for the two mirror stacks and unstrained multi-quantum wells for the active layer. A threshold current as low as 2.2 mA has been achieved. The influence of the intentional and growth-related compositional grading at the heterointerfaces on the mirror reflectivity and laser characteristics has been investigated, and key sensitivities to laser performance have been determined. |
| Keywords: | VCSEL Composition grading Distributed Bragg reflectors Reflectivity Threshold current |
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