Determination of the diode parameters of a-Si and CdTe solar modules using variation of the intensity of illumination: An application

An attempt has been made for the determination of diode parameters viz. shunt resistance R_sh, series resistance R_s, diode ideality factor n and reverse saturation current density J₀ of three solar modules: a-Si 47-37, a-Si 51-13 and CdTe 14407. In this regard, two approaches namely (A) and (B) reported by Khan et al. (2010) have been used to determine all the four diode parameters R_sh, R_s, n and J₀. The data of slopes of J-V curve at open circuit conditions (m_oc) and open circuit voltage (V_oc) at different illumination intensities obtained by Del Cueto (1998) for two a-Si and one CdTe solar modules have been used to determine the above diode parameters. The determined values of diode parameters have been used to generate the theoretical J-V curves. The theoretical fill factor (FF) and V_oc have been calculated from the theoretical J-V curves and are plotted along with the experimental FF and V_oc values. The theoretical values of FF and V_oc obtained by the approach (B) of method of Khan et al. (2010) are in good agreement with the experimental values.