The n-CdIn2Se4/p-CdTe heterojunction solar cells

The n-CdIn₂Se₄/p-CdTe heterojunction solar cells have been fabricated by deposition of n-CdIn₂Se₄ thin films using spray pyrolysis on to p-CdTe. Current density-voltage and capacitance-voltage measurements were performed to determine the electrical properties of the structures. The capacitance-voltage behavior indicates an abrupt interface. The junction quality factor (n), series and shunt resistance (R_s and R_sh), fill factor (FF) and efficiency (η) for the cell have been estimated. The device exhibit maximum fill factor (FF), power conversion efficiency (η) of about 0.55% and 0.67%.