Optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films |
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| Authors: | AC Galca G SocolV Craciun |
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| Affiliation: | a Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics, RO - 077125, M?gurele-Bucharest, Romaniab Laser-Surface-Plasma Interactions Laboratory, Lasers Department, National Institute for Lasers, Plasma and Radiation Physics, RO - 077125, M?gurele-Bucharest, Romaniac Department of Materials Science and Engineering, University of Florida, 320 MAE, Gainesville, FL 32611, USA |
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| Abstract: | The paper presents the optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films with various In/(In + Zn) ratios obtained by Pulsed Laser Deposition. Thickness results obtained from simulations of X-ray Reflectivity and Spectroscopic Ellipsometry data were very similar. The dependence of density on stoichiometry resembles the corresponding dependence of the refractive index in the transparency range. A free carrier absorption was noted in the visible spectral range, leading to a weak absorbing thin transparent conductive oxide. On the other hand, the refractive index is smaller than those of based oxides (ZnO and In2O3), and counterbalance therefore the weak light absorption. |
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| Keywords: | Transparent conductive oxides Amorphous oxide semiconductors Thin films X-ray reflectivity Spectroscopic ellipsometry Optical properties |
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