| TFT制作中静电击穿的研究 |
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| 引用本文： | 王丽娟,王百金. TFT制作中静电击穿的研究[J]. 长春理工大学学报(自然科学版), 2004, 27(1): 74-76 |
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| 作者姓名： | 王丽娟 王百金 |
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| 作者单位： | 长春理工大学,长春,130022;东北师范大学,长春,130021 |
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| 摘 要： | 薄膜晶体管(Thin Film Transistor 英文缩写TFT)是有源矩阵液晶显示器的开关元件.在TFT的制作中,静电击穿严重影响TFT的制作成品率.本文重点研究O2灰化设备辉光放电过程中产生的静电击穿.这种静电击穿破坏TFT产品的短路环,引起栅极与源漏电极短路.本文通过实验与分析,找到了O2灰化设备产生静电击穿的原因,并提出解决对策,在吉林彩晶(JCT工厂)的TFT制作中广泛应用.
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| 关 键 词： | 静电击穿 异常放电 TFT |
| 文章编号： | 1004-485X(2004)01-0074-03 |
| 修稿时间： | 2003-09-10 |
The Research of Electrostatic Breakdown in the Production of TFT |
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| WANG Lijuan WANG Baijin. The Research of Electrostatic Breakdown in the Production of TFT[J]. Journal of Changchun University of Science and Technology, 2004, 27(1): 74-76 |
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| Authors: | WANG Lijuan WANG Baijin |
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| Affiliation: | 1 Changchun University of Science and Technology;2 Northeast Normal University |
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| Abstract: | Thin Film Transistor (TFT) is the switch device of Active Matrix Liquid Crystal Display. In the production of TFT, electrostatic breakdown seriously affects the rate of finished product. The focal point of this paper is to study the electrostatic breakdown occurred in the glow discharge of O 2 ashing equipments. This kind of electrostatic breakdown destroys the short-circuit ring of TFT and leads to the short between the gate and the source. Through analysis and experiments, this paper finds the reason of electrostatic breakdown caused by O 2 ashing equipments, and puts forward the solutions. The solutions are widely applied in the production of TFT in JCT factory. |
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| Keywords: | Electrostatic Breakdown Abnormal Discharge TFT |
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