Temperature dependence study of two-dimensional electron gas effecton the noise performance of high frequency field effect transistors |
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Authors: | Feng M. Scherrer D. Kruse J. Apostolakis P.J. Middleton J.R. |
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Affiliation: | Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL; |
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Abstract: | We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices |
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