Thin cuprous oxide films prepared by thermal oxidation of copper foils with water vapor |
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| Authors: | JianBo Liang Naoki KishiTetsuo Soga Takashi JimboMohsin Ahmed |
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| Affiliation: | a Department of Frontier Materials,Nagoya Institute of Technology, Nagoya 4668555, Japanb Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 4668555, Japan |
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| Abstract: | We present an improved preparation method for the growth of high quality crystals of cuprous oxide films grown by thermal oxidation of cupper foils with water vapor. This method proved to be good for preparing cuprous oxide films with high purity and large grain size. X-ray diffraction studies revealed the formation of Cu2O films with preferred (111) orientation. The cuprous oxide diodes fabricated by the above technique have been studied using current-voltage method. |
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| Keywords: | Water vapor Surfaces Oxide Cuprous oxide Semiconducting materials |
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