| 12～15 GHz 5 W GaAs宽带内匹配功率管及其应用 |
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| 引用本文： | 钟世昌,周焕文,陈堂胜,冯军. 12～15 GHz 5 W GaAs宽带内匹配功率管及其应用[J]. 固体电子学研究与进展, 2008, 28(3) |
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| 作者姓名： | 钟世昌 周焕文 陈堂胜 冯军 |
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| 作者单位： | 单片集成电路及模块电路国家重点实验室,南京,210016;南京电子器件研究所,南京,210016;东南大学信息科学与工程学院,南京,210096;南京电子器件研究所,南京,210016;单片集成电路及模块电路国家重点实验室,南京,210016;南京电子器件研究所,南京,210016;东南大学信息科学与工程学院,南京,210096 |
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| 摘 要： | 报道了一种新型的砷化镓宽带高效内匹配功率放大器,它采用集总参数与分布参数相混合的匹配电路形式,取用南京电子器件研究所研制的12 mm功率PHEMT管芯,研制的内匹配功率放大器在12～15 GHz频带内,输出功率大于5 W,功率增益大于6 dB,相对带宽为25%,典型功率附加效率为25%。
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| 关 键 词： | 砷化镓 功率放大器 宽带 内匹配 |
12~15 GHz 5-Watt GaAs Broadband Internally Matched Transistor and Applications |
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| ZHONG Shichang,ZHOU Huanwen,CHENG Tangshen,FENG Jun. 12~15 GHz 5-Watt GaAs Broadband Internally Matched Transistor and Applications[J]. Research & Progress of Solid State Electronics, 2008, 28(3) |
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| Authors: | ZHONG Shichang ZHOU Huanwen CHENG Tangshen FENG Jun |
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| Affiliation: | ZHONG Shichang1,2,3 ZHOU Huanwen2 CHENG Tangshen1,2 FENG Jun3(1 National Key Laboratory of Monolithic Integrated Circuits , Modules,Nanjing,210016,CHN)(2 Nanjing Electronic Devices Institute,CHN)(3 Institute of Information Science , Engineering,Southeast University,210096,CHN) |
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| Abstract: | A new GaAs broadband and high efficient internally matched power amplifier is reported in this paper.The coexistant technology of the lumped and distributed components is used.Using one 12 mm power PHEMT transistor made by Nanjing Electronic Devices Institute,the amplifier demonstrates an output power of more than 5W with a power gain of over 6 dB and relative wideband of 25% and the typical PAE of 25% across the band of 12～15 GHz. |
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| Keywords: | GaAs power amplifier broadband internal matching |
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