Electrical Properties of GeO2–NiO Materials Containing Ni2GeO4 |
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| Authors: | V N Tsygankov V V Safonov A I Kozlov V P Gavrilov |
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| Affiliation: | (1) Lomonosov State Academy of Fine Chemical Technology, pr. Vernadskogo 86, Moscow, 117571, Russia;(2) OAO Almaz, Kotovsk |
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| Abstract: | The GeO2–NiO system is studied in the stability range of Ni2GeO4 by temperature-dependent resistivity measurements, in combination with x-ray diffraction, differential thermal analysis, and thermogravimetry. The resistivity of the starting mixtures and heat-treated samples is measured in the composition range 55–90 mol % NiO. The effect of air humidity on the resistivity of the samples is examined. |
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