A new GaAs power MESFET structure for improved power capabilities

A GaAs microwave power MESFET structure is described that achieves a significant improvement of the gate mode attenuation by incorporating a suitably terminated transmission line parallel to the gate. The reduced attenuation allows a much wider single gate (a factor of 4 is possible) and a corresponding improvement of the total output power. It is shown that this approach leads to higher gain and cutoff frequency. An additional advantage of this MESFET structure is its higher input resistance relative to a device with equal total gate width but more gates in parallel. This results in simpler matching circuits of greater bandwidth. The single-gate structure can be connected in parallel to further increase the total output power. The results of an electrical characterization of the devices are presented, and its advantages and potential application are discussed