| MEMS高g加速度传感器封装热应力的研究 |
| |
| 引用本文： | 李平,石云波,郭涛,刘俊,张晓明. MEMS高g加速度传感器封装热应力的研究[J]. 传感技术学报, 2010, 23(12). DOI: 10.3969/j.issn.1004-1699.2010.12.005 |
| |
| 作者姓名： | 李平 石云波 郭涛 刘俊 张晓明 |
| |
| 作者单位： | 中北大学仪器科学与动态测试教育部重点实验室,太原,030051 |
| |
| 基金项目： | 新世纪优秀人才支持计划资助 |
| |
| 摘 要： | 封装热应力是导致MEMS器件失效的主要原因之一,本文设计了一种MEMS高g加速度传感器,并仿真研究了传感器在封装过程中的热应力及影响其大小的因素。根据封装工艺,建立设计的高g加速度传感器封装的有限元模型,利用AN-SYS软件仿真传感器在不同的贴片工艺中受到的热应力及影响热应力的因素。结果显示,在封装中,与直接贴片到管壳底部相比,MEMS高g加速度传感器芯片底面键合高硼硅玻璃后再贴片到管壳底部时,封装热应力可从135MPa降低到33MPa;在贴片工艺中,基板的热膨胀系数和贴片胶的弹性模量、热膨胀系数及厚度是影响封装热应力的主要因素;在健合工艺中,基板和键合温度主要影响到热应力的大小。
|
| 关 键 词： | 封装 MEMS高g加速度传感器 热应力 贴片工艺 热膨胀系数 |
Study on the Thermal stress of MEMS high-g accelerometer in the Package |
| |
| LI Ping,SHI Yunbo,GUO Tao,LIU jun,ZHANG Xiaoming. Study on the Thermal stress of MEMS high-g accelerometer in the Package[J]. Journal of Transduction Technology, 2010, 23(12). DOI: 10.3969/j.issn.1004-1699.2010.12.005 |
| |
| Authors: | LI Ping SHI Yunbo GUO Tao LIU jun ZHANG Xiaoming |
| |
| Affiliation: | LI Ping,SHI Yunbo,GUO Tao,LIU jun,ZHANG Xiaoming(Key Laboratory of Instrumentation Science & Dynamic Measurement(North University of China),Ministry of Education,Taiyuan 030051,China) |
| |
| Abstract: | Thermal stress in the package is one of factors that lead to the failure of MEMS device.A MEMS high-g accelerometer was designed,at the same time,thermal stress and the factors which effect thermal stress was si-mulated during the sensor packaging prosess in this paper.According to packaging technology,the finite element model of high-g accelerometer package was built by ANSYS software and thermal stress was simulated in the different joining technology.The results show that thermal stress can be reduced fr... |
| |
| Keywords: | package MEMS high-g accelerometer thermal stress joining technology thermal expansion coefficient |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《传感技术学报》浏览原始摘要信息 |
|
点击此处可从《传感技术学报》下载全文 |
|
