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| 长波InAs/GaSb II类超晶格红外探测器 | |
| 引用本文： | 周 易,陈建新,徐庆庆,徐志成,靳川,许佳佳,金巨鹏,何力.长波InAs/GaSb II类超晶格红外探测器[J].红外与毫米波学报,2013,32(3):210-214. |
| 作者姓名： | 周 易 陈建新 徐庆庆 徐志成 靳川 许佳佳 金巨鹏 何力 |
| 作者单位： | 1. 中国科学院上海技术物理研究所红外材料与器件重点实验室,上海200083;中国科学院研究生院,北京100039 2. 中国科学院上海技术物理研究所红外材料与器件重点实验室,上海,200083 3. 中国科学院上海技术物理研究所红外材料与器件重点实验室,上海200083;中国科学院研究生院,北京100039;暨南大学光电工程研究所,广东广州510632 |
| 基金项目： | 国家自然科学基金，the National Natural Science Foundation of China |
| 摘 要： | 报道了50％截止波长为12.5μm的InAs/GaSb Ⅱ类超晶格长波红外探测器材料及单元器件.实验采用分子束外延技术在GaSb衬底上生长超晶格材料.吸收区结构为15ML(InAs)/7ML(GaSb),器件采用PBIN的多层异质结构以抑制长波器件暗电流.在77K温度下测试了单元器件的电流-电压(I-v)特性,响应光谱和黑体响应.在该温度下,光敏元大小为100μm×100μm的单元探测器RmaxA为2.5Ωcm2,器件的电流响应率为1.29A/W,黑体响应率为2.1×109cmHz12/W,11μm处量子效率为14.3％.采用四种暗电流机制对器件反向偏压下的暗电流密度曲线进行了拟合分析,结果表明起主导作用的暗电流机制为产生复合电流. |
| 关 键 词： | InAs/GaSb Ⅱ类超晶格 长波12.5μm 暗电流 |
| 收稿时间： | 3/7/2012 12:00:00 AM |
| 修稿时间： | 2012/3/30 0:00:00 |
Long wavelength infrared detector based on Type-II InAs/GaSb superlattice |
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| ZHOU Yi,CHEN Jian-Xin,XU Qing-Qing,XU Zhi-Cheng,JIN Chuan,XU Jia-Ji,JIN Ju-Peng and HE Li.Long wavelength infrared detector based on Type-II InAs/GaSb superlattice[J].Journal of Infrared and Millimeter Waves,2013,32(3):210-214. | |
| Authors: | ZHOU Yi CHEN Jian-Xin XU Qing-Qing XU Zhi-Cheng JIN Chuan XU Jia-Ji JIN Ju-Peng and HE Li |
| Affiliation: | Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences |
| Abstract: | |
| Keywords: | InAs/GaSb superlattice long wavelength dark current |
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