| 新一代纳米级器件物理特性仿真工具——SenTaurus Device |
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| 引用本文： | 张宪敏,李惠军,侯志刚,于英霞. 新一代纳米级器件物理特性仿真工具——SenTaurus Device[J]. 微纳电子技术, 2007, 44(6): 299-304 |
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| 作者姓名： | 张宪敏 李惠军 侯志刚 于英霞 |
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| 作者单位： | 山东大学,孟堯微电子研发中心,济南,250100 |
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| 摘 要： | 介绍了Synopsys Inc.新近推出的新一代纳米层次器件物理特性仿真工具——SenTaurus Device的功能特点以及进行器件物理特性仿真的典型流程。重点介绍了为实现nm级器件物理特性的模拟引入的诸多近代器件物理模型。利用SenTaurus Device对基于Sentaurus Process生成的一个90nm NMOS器件进行了器件物理特性仿真,并给出了相应结果。
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| 关 键 词： | 集成电路 纳米层次 场效应晶体管 非局域隧穿 小尺寸效应 |
| 文章编号： | 1671-4776（2007）06-0299-06 |
| 修稿时间： | 2007-04-02 |
New Generation Physical Characteristic Simulation Tool of Nano-Level Device-SenTaurus Device |
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| ZHANG Xian-min,LI Hui-jun,HOU Zhi-gang,YU Ying-xia. New Generation Physical Characteristic Simulation Tool of Nano-Level Device-SenTaurus Device[J]. Micronanoelectronic Technology, 2007, 44(6): 299-304 |
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| Authors: | ZHANG Xian-min LI Hui-jun HOU Zhi-gang YU Ying-xia |
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| Abstract: | The functional characteristics and typical simulation flow of SenTaurus Device the new generation physical characteristic simulation tool were described,and several recent physical models for the simulation of nano-level device were emphatically introduced. Based on a 90 nm NMOS produced by Sentaurus Process,the simulation was run on Sentaurus Device,and the results of the nano-level device were presented. |
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| Keywords: | IC nano-level MOSFET nonlocal tunneling small scale effect |
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