Novel charge neutralization techniques applicable to wide current range of FIB processing in FIB-SEM combined system

FIB-induced charging is one of the most critical issues for achieving successful circuit modifications of LSI. We have developed novel charge neutralization techniques applicable to a wide current range (from pico to nanoampere-order) of FIB processing in a FIB-SEM combined system. The method utilizes a 500 eV focused electron beam instead of an electron shower, and also a combination of microprobing and FIB-assisted deposition to make a current path from FIB processing point to the grounded microprobe. The effects of our techniques on charge neutralization capability were investigated using electrically erasable-programmable read-only memory devices and n-MOS transistors. For the low FIB current condition of less than 500 pA, it is found that the focused electron beam prevents threshold voltage shifts of both irradiated and neighboring transistors, and that the ratio of electron to ion beam currents is a key parameter to achieving effective charge neutralization. We also demonstrated that the combined method of microprobing and FIB-assisted deposition prevents parameter shifts of transistors even for high-current (nanoampere-order) FIB irradiation. Moreover, we evaluated the upper-limit resistance of the current path formed by FIB-assisted carbon deposition to prevent charging induced by a given FIB current.