Electron irradiation controlled profile of recombination center concentration in silicon |
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| Authors: | I. V. Grekhov L. S. Kostina V. V. Kozlovskii V. N. Lomasov A. V. Rozhkov |
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| Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.St. Petersburg State Polytechnical University,St. Petersburg,Russia |
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| Abstract: | It is shown that the axial distribution of the recombination center concentration in high-voltage silicon p + Nn + diodes can be controlled by electron irradiation in a certain energy range. Results of investigations of the main static and dynamic characteristics of electron-irradiated diodes are presented. |
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