低暗电流高温工作碲镉汞红外探测器制备技术

报道了与传统的n-on-p结构相比具有更低暗电流的p^+-on-n型碲镉汞红外探测器的研究进展。通过水平滑舟富碲液相外延生长的方法在碲锌镉衬底上原位生长In掺杂碲镉汞n型吸收层材料,然后再分别采用As离子注入技术和富汞垂直液相外延技生长技术实现了P型As外掺杂的p^+-on-n型平面型和双层异质结台面型两种结构的芯片制备。碲镉汞探测器的主要缺点是需要低温制冷,期望碲镉汞探测器在不降低性能的前提下具有更高的工作温度(High Operating Temperature,HOT),成为红外探测器技术发展的主要方向。本文对基于标准的n-on-p(Hg空位)掺杂工艺及新研制的p-on-n型As离子注入及异质结制备技术的探测器进行了高温性能测试,测试结果表明采用p-on-n型的碲镉汞探测器能够实现更高的工作温度。

Low-dark current HOT infrared focal plane arrays using MCT technology

In this paper the recent development on manufacturing and characterization of low dark currents p+-on-n HgCdTe photodiodes was presented.The n-Type HgCdTe (MCT) absorber layer was grown by liquid-phase epitaxy (LPE) on lattice matched CdZnTe (CZT) substrate and the P type layers are grown by As Ion plantation and vertical LPE (VLPE) from Hg-rich melts doped with arsenic.It is desirable that the MCT detectors can operate at high operating temperatures (HOT) without sacrificing their performance.We present our latest results on the standard n-on-p(Hg vacancy doped),ion implantation of arsenic and heterostructure p-on-n photodiode technology was selected for detailed HOT testing.The results prove that the performance of p-on-n photodiode is better than other devices at high operating temperatures.