抑制In元素在CdTe中的退火扩散

分子束外延HgCdTe/InSb 材料需要阻止 In 元素在 HgCdTe 中的不受控扩散。我们使用 CdTe缓冲层作为阻挡层,以期控制 In 的扩散。为研究 In 元素在 CdTe 材料中的扩散,我们使用分子束外延方法获得CdTe/InSb样品。考虑到在退火时In 元素可能通过环境扩散污染材料,我们使用 SiO2 作为钝化层,通过对比试验发现 In 元素通过环境扩散污染表面的证据,为控制 In 元素的扩散提供新的思路。

Restrain In diffusion CdTe in a anneal process

Molecular beam epitaxy HgCdTe/InSb materials need to prevent uncontrolled diffusion of In elements in HgCdTe. We use CdTe buffer layer as barrier layer to control In diffusion. In order to study the diffusion of In in CdTe materials, the CdTe/InSb samples are obtained by molecular beam epitaxy. Considering that In element may pollute the material through environmental diffusion during annealing, we use the SiO2 is as passivation layer, and find evidence of in element polluting the surface through environmental diffusion through comparative tests, which provides a new idea for controlling in element diffusion.