| 短/中波双色碲镉汞红外焦平面探测器研究 |
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| 引用本文： | 王经纬,晋舜国,陈慧卿,王亮,周立庆.短/中波双色碲镉汞红外焦平面探测器研究[J].激光与红外,2018,48(11):1395-1398. |
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| 作者姓名： | 王经纬 晋舜国 陈慧卿 王亮 周立庆 |
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| 作者单位： | 华北光电技术研究所,北京 100015 |
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| 摘 要： | 报道了基于分子束外延碲镉汞短/中波双色材料、器件的最新研究进展。采用分子束外延方法制备出了高质量的短/中波双色碲镉汞材料,并优化了材料的质量,材料表面缺陷密度控制在500个/cm-2以内,通过扫描电子显微镜可以看出各层之间界面陡峭,使用傅里叶红外变换光谱仪(FTIR)、X射线衍射(XRD)等方法对材料进行了表征,基于此材料制备出了短/中波碲镉汞双色器件,器件测试性能良好。
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| 关 键 词： | 碲镉汞 短/中波双色 红外探测器 分子束外延 |
Research on SW/MW dual-band MCT focal plane arrays |
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| WANG Jing-wei,JIN Shun-guo,CHEN Hui-qing,WANG Liang,ZHOU Li-qing.Research on SW/MW dual-band MCT focal plane arrays[J].Laser & Infrared,2018,48(11):1395-1398. |
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| Authors: | WANG Jing-wei JIN Shun-guo CHEN Hui-qing WANG Liang ZHOU Li-qing |
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| Affiliation: | Focal Plane Arrays Department,North China Research Institute of Electro-Optics,Beijing 100015,China |
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| Abstract: | The latest research progress on materials and devices of dual-band MCT based on molecular beam epitaxy were presented.High quality MCT dual-band thin films were prepared by MBE technology and improvements on macro-defects and crystal quality were made.Wafers were measured by SEM,FTIR,XRD.FPAs were produced by mating devices from these wafers to dual-band read-out integrated circuits.The FPAs exhibited high optical-electronic quality at 80K. |
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| Keywords: | HgCdTe MW/LW dual-band infrared detector molecular beam epitaxy |
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