| 总剂量效应对CMOS读出电路影响及设计加固方法研究 |
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| 引用本文： | 李敬国,温建国,陈彦冠. 总剂量效应对CMOS读出电路影响及设计加固方法研究[J]. 激光与红外, 2019, 49(3): 355-360 |
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| 作者姓名： | 李敬国 温建国 陈彦冠 |
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| 作者单位： | 华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015 |
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| 摘 要： | 总剂量效应会对CMOS读出电路的性能产生明显的影响,甚至使CMOS读出电路功能完全失效。本文主要分析了总剂量效应对NMOS器件阈值、漏电流和器件间漏电流的影响机理。随后,针对640×512 CMOS读出电路提出了可行的抗辐照版图设计方法。总剂量试验表明,采用环栅结构、环源结构的640×512读出电路芯片抗总剂量能力可以达到100 krad(Si)以上。
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| 关 键 词： | 总剂量效应 读出电路 环源结构 环栅结构抗辐照 |
Study of total dose effects on CMOS readout integrated circuit and methods of hardened by design |
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| LI Jing-guo,WEN Jian-guo,CHEN Yan-guan. Study of total dose effects on CMOS readout integrated circuit and methods of hardened by design[J]. Laser & Infrared, 2019, 49(3): 355-360 |
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| Authors: | LI Jing-guo WEN Jian-guo CHEN Yan-guan |
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| Affiliation: | North China Research Institute of Electro-Optics,Beijing 100015,China |
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| Abstract: | Total dose effects can affect obviously ROIC′s performance and even make its function fail.Frist,the mechanism of total dose effect on the threshold,leakage current and inter-device leakage current of NMOS devices is analyzed.Then,the hardening radiation design methods for 640×512 ROIC chip is proposed.Total ionizing dose experiment shows that the ROIC’s radiation tolerance,using enclosed gate geometry and ringed-source geometry,is beyond 100 krad(Si). |
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| Keywords: | total dose effect ROIC ringed-source geometry enclosed gate geometry radiation hardening |
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