外延型InSb(InAlSb)探测器工艺分析

结合相关文献对近年来InSb基MBE外延InSb(InAlSb)材料工艺及器件性能进行了梳理分析和总结,对还存在的问题进行了探讨.InSb基外延材料(尤其是InAlSb)确实具有低暗电流、噪声抑制、高工作温度和温度稳定性优势,但材料中存在的较多缺陷影响了探测器的信号电流、探测率、响应率和电阻.分子(原子)氢脱氧技术、生...

Process analysis of epitaxial InSb(InAlSb) detector

In this paper,InSb based MBE epitaxial InSb(InAlSb)material process and device performance in recent years were analyzed and summarized,and the existing problems were discussed.InSb-based epitaxial materials(especially InAlSb)do have the advantages of low dark current,noise suppression,high operating temperature and temperature stability,but many defects in the materials affect the detector′s signal current,detection rate,response rate and resistance.Molecular(atomic)hydrogen deoxidation technology,growth temperature,V/III ratio and other process parameters optimization can reduce the material surface defects,improve the uniformity and consistency of the pixel;Continuous optimization of material structure and doping can improve the detector′s signal response and operating temperature.The continuous optimization of etching and other device processes can lay a foundation for the preparation of larger focal plane arrays.