雪崩光电器件过剩噪声分析

基于光子在雪崩光电器件内吸收位置的差异,提出过剩噪声因子在器件垂直方向的分布模型,并基于TCAD 和Matlab 仿真,验证了模型的有效性。模型考虑了光子在硅雪崩器件内不同吸收位置的过剩噪声因子,结合光子在器件深度方向的吸收比例,计算器件(器件结构由TCAD构造)的平均噪声因子水平:233 @ E=34×105 V/cm 和534 @ E=36×105 V/cm,比单独考虑光子在N中性体区吸收(过剩噪声因子:288 @ E=34×105 V/cm 和1294 @ E=36×105 V/cm)或P中性体区吸收(过剩噪声因子:221 @ E=34×105 V/cm 和379 @E=36×105 V/cm),更能反映器件的真实工作情况。

Excess noise analysis of avalanche photoelectric device

Based on the difference of the photon absorption positions in the avalanche optoelectronic device,a distribution model of the excess noise factor along the vertical direction of the device is proposed. The validity of the model is verified by the TCAD and Matlab simulation. The model considered the variable excess noise factor at the different photon absorption locations in the device,and combining the absorption ratio in the depth of the device to calculate the average noise factor level of the device(the device structure was built with TCAD):2.33 @ E=3.4×105 V/cm and 5.34 @ E=3.6×105 V/cm,which can better reflect the real working conditions of the device than considering the photon absorption in the N neutral region alone(excess noise factor:2.88 @ E=3.4×105 V/cm and 12.94 @ E=3.6×105 V/cm) or P neutral region alone(excess Noise factor:2.21 @ E=3.4×105 V/cm and 3.79 @ E=3.6×105 V/cm).