长波碲镉汞探测器RV特性分析

对硼离子注入制备的N on P平面结长波碲镉汞探测器的RV曲线进行分析,研究不同偏压下暗电流机制,提取得到探测器的电学参数及理想因子,表明为提升器件性能,需要对探测器的陷阱辅助隧穿电流及产生复合电流进行抑制。通过对长波碲镉汞探测器RV曲线的拟合分析,表明RV拟合技术作为一种有效的分析方法,可用于评估器件性能和工艺状态,并指导工艺改进。

Analysis of resistance voltage characteristic for long wavelength HgCdTe detector

The RV curve of n-on-p planar samples of long-wave HgCdTe detector prepared by B implantation was analyzed,the dark current mechanism under different bias voltage was studied,and the electrical parameters and ideal factors of the detector were extracted. The results showed that the better performance could be achieved by suppressing the trap-assisted tunneling current and the generation recombination current. The fitting analysis of the RV curve of the HgCdTe detector shows that the RV fitting technique can be used to evaluate the device performance and process state and guide the process improvement as an effective analysis method.