| HgCdTe雪崩光电二极管的研究进展 |
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| 引用本文： | 宋淑芳,王小菊,田震.HgCdTe雪崩光电二极管的研究进展[J].激光与红外,2019,49(10):1159-1164. |
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| 作者姓名： | 宋淑芳 王小菊 田震 |
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| 作者单位： | 华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015 |
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| 摘 要： | 碲镉汞红外雪崩光电二极管(APD)阵列作为最近十多年来发展起来的新型探测器,以其高增益、高灵敏度和高速探测的优点,成为未来微弱信号探测、二维/三维成像、主/被动探测应用的重要器件。本文重点阐述了雪崩光电二极管的基本原理、以及HgCdTe雪崩光电二极管材料和器件的研究,结合应用方向对其研究进展进行了综述性介绍。
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| 关 键 词： | HgCdTe 雪崩二极管 二维/三维成像 |
The theory and research advancement of HgCdTe avalanche photodiode arrays |
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| SONG Shu-fang,WANG Xiao-ju,TIAN Zhen.The theory and research advancement of HgCdTe avalanche photodiode arrays[J].Laser & Infrared,2019,49(10):1159-1164. |
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| Authors: | SONG Shu-fang WANG Xiao-ju TIAN Zhen |
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| Affiliation: | North China Research Institute of Electro-Optics,Beijing 100015,China |
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| Abstract: | HgCdTe avalanche photodiode (APD) array, as a new type of detector developed in the last decade, has become an important device for weak signal detection, 2D /3D imaging and active/passive detection in the future, due to its advantages of high gain, high sensitivity and high speed detection. This paper focuses on the basic principle of avalanche photodiode, and the research of HgCdTe avalanche photodiode materials and devices. In addition, the research progress in this field is reviewed. |
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