硅基异质集成化合物半导体技术新进展

随着摩尔定律即将走向尽头,以及军民电子信息系统对多功能集成、高密度集成、小体积重量、低功耗、大带宽、低延迟等性能的持续追求,将多种化合物半导体材料体系(如GaN、InP、SiC等)的功能器件、芯片,与CMOS集成电路的芯片进行异质集成的技术正在拉开序幕,将在微电子、光电子等领域带来一场新的革命,硅基异质集成也被认为是发展下一代集成微系统的技术平台。本文梳理了射频微电子学与硅光子学领域中以化合物半导体为主的材料(或芯片)与硅半导体材料(或芯片)异质集成的最新进展,以期国内相关领域研究人员对国外的进展有一个比较全面的了解。

New progress in heterogeneous integration of compound semiconductors on silicon

As Moore’s law is coming to an end,and the continuous pursuit of multi-functional integration,high density integration,small volume weight,low power consumption,large bandwidth,low delay,and so on,heterogeneous integration of functional devices and chips of various compound semiconductor material systems(such as GaN,InP,SiC,etc.)with chips of CMOS integrated circuit is beginning,which will bring a new revolution in the post Moore era.The silicon-based heterogeneous integration is also regarded as the technical platform for the development of the next gen eration integrated microsystems.The latest developments in the heterogeneous integration of compound semiconductor materials(or chips)with silicon semiconductor materials(or chips)in the field of RF microelectronics and silicon photonics are reviewed in the article,so as to provide domestic researchers with a more comprehensive understanding of the progress abroad.