Structural and electrical properties of stable ni/cr thin films |
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| Authors: | C. L. Au M. A. Jackson W. A. Anderson |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, State University of New York at Buffalo, 217C Bonner Hall, 14260 Amherst, NY;(2) Resistors were obtained from Ohmtek, Inc., 2160 Liberty Dr., Summit Industrial Park, 14304 Niagara Falls, NY |
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| Abstract: | The electrical and structural properties of nickel-chrome (NiCr) thin film resistors were studied for the effect of post-deposition annealing on stability. The temperature coefficient of resistance (TCR) of sheet resistivities in the range of 100 to 200 Ω/□ could be improved by both air and vacuum annealing to achieve 5 ± 5 ppm/°C over the temperature range of -180° C to +100° C. With stability tests, air annealing proved to be more favorable for stable TCR. Studies via SIMS and ESCA identified surface segregation of Cr whereas TEM micrographs revealed correlating structural transformation of the films upon annealing. An intentional impurity, Si, played an important role in achieving a low TCR. |
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| Keywords: | NiCr Thin Film Resistors Stability |
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