Electrical characteristics of the ITO/HgInTe photodiodes |
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| Authors: | L A Kosyachenko I M Rarenko E F Sklyarchuk I I German Sun Weiguo |
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| Affiliation: | (1) Chernovtsy National University, Chernovtsy, 58012, Ukraine;(2) Optoelectronics Institute, P.O. Box 030, 471009 Luoyang, Henan, People’s Republic of China |
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| Abstract: | Photodiodes designed to be sensitive in the region 0.5–1.7 µm and obtained by vacuum magnetron sputtering of the ITO (SnO2 + In2O3) layer on the surface of the Hg3In2Te6 single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described quantitatively based on the energy diagram and the found parameters of the heterojunction. |
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