调谐外腔半导体激光器输出双稳环的确定

在考察了外腔半导体激光器(ECLD)的振荡频率ν与激光二极管(LD)中载流子密度N(或增益g)、介质的折射率n以及LD第m个模式的共振频率νm间的关系之后,利用微扰法对LD的N-ν曲线上被前人错判为不稳定的两个关键区段重新进行了分析,结果表明这两个区段是稳定区段,据此,可以确定在对ECLD进行调频的过程中其增益介质的N-ν曲线上出现的双稳环.

Determinationof hysteresis loops for tunable externalcavity semiconductor lasers

Investigations have been made to determine relations between the oscillation frequency ν of the ECLD and threshold carrier density N (orgain coefficient g),refractive indexn as well as mode frequency N_ν of the diode. Afterwards,the perturbation method has been adopted to check the stability of the state represented by the points on the N-ν curve. The results indicate that two segments of vital importance for the formation of the loop,which were formerly misjudged as representing non stable states,represent stable state. Therefore,the hysteresis loop on the N-ν curve can be accomplished.