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Heterostructure complementary technology |
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| Authors: | Simmons JG Taylor GW |
| Affiliation: | University of Bradford, Microelectronics & CADMAT Centre, Bradford, UK; |
| Abstract: | A complementary inverter configuration based on two new heterostructure field-effect devices is proposed. The FETs are fabricated in a common substrate grown by molecular-beam epitaxy. The devices rely on the formation of inversion layers at heterojunction interfaces. |
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