A new technique for measuring MOSFET inversion layer mobility |
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Authors: | Huang C-L Faricelli JV Arora ND |
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Affiliation: | Digital Equipment Corp., Hudson, MA; |
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Abstract: | An experimental technique for accurately determining both the inversion charge and the channel mobility μ of a MOSFET is presented. With this new technique, the inversion charge is measured as a function of the gate and drain voltages. This improvement allows the channel mobility to be extracted independent of drain voltage VDS over a wide range of voltages (VDS=20-100 mV). The resulting μ(VGS) curves for different VDS show no drastic mobility roll-off at V GS near VTH. This suggests that the roll-off seen in the mobility data extracted using the split C- V method is probably due to inaccurate inversion charge measurements instead of Coulombic scattering |
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