Orthogonal and fine lithographic structures attained from the next generation proton beam writing facility

A second generation proton beam writing (PBW) system has been built at the Centre for Ion Beam Applications at the National University of Singapore for fabrication of high aspect ratio 3D nano lithographic structures. System improvements and a few lithographic structures obtained with this facility are presented in this paper. Through accurate alignment of the magnetic quadrupole lenses and the electrostatic scanning system, orthogonal beam scanning has been achieved. The earlier constrain of limited beam scan area has been overcome by adopting a combination of beam and stage scanning as well as stitching. With these improvements smallest ever Ni structure of 65 nm in width has been fabricated using nickel electroplating on a proton beam written PMMA sample in the second generation PBW facility. Using this improved PBW facility, we have also demonstrated the fabrication of fine lithographic patterns with 19 nm line width and 60 nm spacing in 100 nm thick negative high resolution hydrogen silsesquioxane resist. Future possible system improvements leading to finer resolution will be discussed briefly.