Effects of SiC nanowires and whiskers on high-entropy carbide-based composites sintered at low and high temperatures |
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Authors: | Yang Liu Wei-Ming Guo Kun-Heng Huang Hua-Tay Lin |
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Affiliation: | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou, China |
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Abstract: | This study aimed to investigate the toughening effects of SiC nanowires (SiCnw) and SiC whiskers (SiCw) on high-entropy carbide based composites prepared at different temperatures (1600°C and 2000°C). At low temperature (1600°C), SiCnw and SiCw maintain their original morphology and properties, and exhibit the good toughening effects. The SiCnw with larger aspect ratio and more curly wires exhibit a much stronger toughening effect on the (Ti0.2Zr0.2Nb0.2Ta0.2Mo0.2)C0.8 composites reinforced with 15 vol.% SiCnw, which shows the highest value of fracture toughness about 6.7 MPa∙m1/2. However, at high sintering temperature (2000°C), SiCnw and SiCw are prone to thermal-induced damages, which significantly reduces their mechanical properties, and thus, toughening effects on (Ti0.2Zr0.2Nb0.2Ta0.2Mo0.2)C0.8 composites. The addition of SiCw, which have better thermal stability at 2000°C, results in the (Ti0.2Zr0.2Nb0.2Ta0.2Mo0.2)C0.8–15 vol.% SiCw composite exhibiting relatively better fracture toughness, about 3.7 MPa∙m1/2. Based on the results of the current study, the critical influence of SiCnw and SiCw on the toughening of (Ti0.2Zr0.2Nb0.2Ta0.2Mo0.2)C0.8 composites is highly dependent on their high-temperature thermal stability. |
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Keywords: | high-entropy carbide ceramics silicon carbide nanowires silicon carbide whiskers composites (Ti,Zr,Nb,Ta,Mo)C |
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