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| B^＋,P^＋离子注入P—Si中产生的缺陷及其退火特性的DLTS研究 | |
| 引用本文： | 孙Jing兰 陈建新. B^＋,P^＋离子注入P—Si中产生的缺陷及其退火特性的DLTS研究[J]. 半导体学报, 1991, 12(2): 93-100 |
| 作者姓名： | 孙Jing兰 陈建新 |
| 作者单位： | 中国科学院研究生院 北京100039(孙璟兰，李名复)，北京工业大学无线电系 100022(陈建新) |
| 摘 要： | |
| 关 键 词： | 离子注入 P－Si 空穴缺陷 DLTS 退火 |
DLTS Study of B~+ and P~+ Implantation Associated Defects in p-Si and Their Annealing Behaviour |
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| Sun Jinglan/Graduate School,University of Science and Technology of ChinaLi Mingfu/Graduate School,University of Science and Technology of ChinaChen Jianxin/Beijing Industrial University. DLTS Study of B~+ and P~+ Implantation Associated Defects in p-Si and Their Annealing Behaviour[J]. Chinese Journal of Semiconductors, 1991, 12(2): 93-100 | |
| Authors: | Sun Jinglan/Graduate School University of Science Technology of ChinaLi Mingfu/Graduate School University of Science Technology of ChinaChen Jianxin/Beijing Industrial University |
| Abstract: | |
| Keywords: | Ion implantation hole traps capacitance current DLTS |
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